inchange semiconductor isc product specification isc silicon npn power transistor BUL128 description collector?emitter sustaining voltage : v ceo(sus) = 400v(min.) low collector saturation voltage : v ce( sat ) = 0.7v(max) @ i c = 0.5a very high switching speed applications designed for use in lighting applic ations and low cost switch- mode power supplies. absolute maximum ratings(t a =25 ) symbol parameter value unit v ces collector-emitter voltage 700 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 9 v i c collector current-continuous 4 a i cm collector current-peak t p <5ms 8 a i b b base current-continuous 2 a i bm base current-peak t p <5ms 4 a p c collector power dissipation t c =25 70 w t i junction temperature 150 t stg storage temperature range -65~150 thermal characteristics symbol parameter max unit r th j-c thermal resistance,junction to case 1.78 /w r th j-a thermal resistance,junction to ambient 62.5 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor BUL128 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c = 100ma; l= 25mh 400 v v (br)ebo emitter-base breakdown voltage i e = 10ma; i c = 0 9 v v ce (sat)-1 collector-emitter saturation voltage i c = 0.5a; i b = 0.1a 0.7 v v ce (sat)-2 collector-emitter saturation voltage i c = 1a; i b = 0.2a b 1.0 v v ce (sat)-3 collector-emitter saturation voltage i c = 2.5a; i b = 0.5a 1.5 v v ce (sat)-4 collector-emitter saturation voltage i c = 4a; i b = 1a b 0.5 v v be (sat)-1 base-emitter saturation voltage i c = 0.5a; i b = 0.1a 1.1 v v be (sat)-2 base-emitter saturation voltage i c = 1a; i b = 0.2a b 1.2 v v be (sat)-3 base-emitter saturation voltage i c = 2.5a; i b = 0.5a 1.3 v i ces collector cutoff current v ce = 700v ; v be = -1.5v v ce = 700v ; v be = -1.5v,t c = 125 0.1 0.5 ma i ceo collector cutoff current v ce = 400v; i b = 0 0.25 ma h fe-1 dc current gain i c = 10ma; v ce = 5v 10 h fe-2 dc current gain i c = 2a; v ce = 5v 14 40 switching times, resistive load t s storage time 3.0 s t f fall time i c = 2a; v cc = 125v; i b1 = -i b2 = 0.4a; t p = 30 s 0.4 s ? h fe-2 classifications a b 14-28 25-40 isc website www.iscsemi.cn
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